Vapor deposition apparatus, vapor deposition method and method of manufacturing organic EL display apparatus

ABSTRACT

Provided are a vapor deposition apparatus, a vapor deposition method, and a method of manufacturing an organic EL display apparatus which can prevent heat generation of a magnet chuck by using the magnet chuck that strongly attracts a deposition mask to dispose a substrate for vapor deposition and the deposition mask in proximity to each other during vapor deposition, while being less influenced by any magnetic field during alignment between the substrate for vapor deposition and the deposition mask. In the vapor deposition apparatus, a magnet chuck ( 3 ) includes a permanent magnet ( 3 A) and an electromagnet ( 3 B).

CROSS-REFERENCE TO RELATED APPLICATIONS

This patent application is a continuation patent application ofco-pending U.S. application Ser. No. 15/757,437, having a filing/§371(c) date of Jun. 27, 2018, which is a U.S. National Stage ofPCT/JP2017/029815, having an international filing date of Aug. 21, 2017.The entire disclosure of each patent application set forth in thisCROSS-REFERENCE TO RELATED APPLICATIONS section is hereby incorporatedby reference.

TECHNICAL FIELD

The present invention relates to a vapor deposition apparatus which issuitable for vapor-depositing organic layers of an organic EL displayapparatus, a vapor deposition method, and a method of manufacturing anorganic electro-luminescence (EL) display apparatus, for example.

BACKGROUND ART

For example, when an organic EL display apparatus is manufactured, adriving element, such as a thin-film-transistor (TFT), a planarizinglayer, and an electrode are formed on a support substrate, and organiclayers are deposited on the electrode for each pixel. The organic layersare susceptible to moisture and thus cannot be etched. For this reason,the organic layers are deposited by overlapping and arranging adeposition mask on the support substrate (substrate for vapordeposition) and then vapor-depositing organic materials through openingsformed in the deposition mask. Consequently, necessary organic materialsare deposited only on the electrodes of required pixels. The substratefor vapor deposition and the deposition mask must be positioned as closeas possible. Otherwise, the organic layer only on the accurate area ofthe pixel cannot be formed. If the organic material is not depositedexclusively on the accurate area of the pixel, a displayed image is morelikely to become unclear. As such, a magnet chuck is utilized to placethe substrate for vapor deposition and a deposition mask close to eachother by using a magnetic material as the deposition mask andinterposing the substrate for vapor deposition between a permanentmagnet or an electromagnet and the deposition mask (for example, seePatent Document 1).

PRIOR ART DOCUMENT Patent Document

Patent Document 1: JP 2008-024956 A

SUMMARY OF THE INVENTION Problem to be Solved by the Invention

Although a metal mask is conventionally used as the deposition mask, inorder to form finer openings, a hybrid-type deposition mask tends to beused nowadays. In the hybrid-type deposition mask, the surroundings ofopenings of the mask formed of a resin film are supported by a metalsupport layer. The deposition mask with a small amount of magneticmaterial, such as the hybrid mask, cannot sufficiently exhibitattraction unless it is under a stronger magnetic field (magneticforce).

As mentioned above, a permanent magnet or an electromagnet is used asthe magnet chuck. Nevertheless, as a permanent magnet constantlygenerates a magnetic field, the magnetic field also acts even when thesubstrate for vapor deposition and the deposition mask are aligned witheach other before vapor deposition. Thus, if the magnetic field isstrong, the deposition mask is attracted to the substrate for vapordeposition at the time of alignment, which makes it difficult to moveand align only one of the substrate for vapor deposition or thedeposition mask with the other. To perform the alignment with littleinfluence of the magnetic field, it is necessary to place the permanentmagnet far away from the deposition mask and the substrate for vapordeposition. However, if the alignment is performed after placing thepermanent magnet at a far-away position, and then the permanent magnetis moved closer to the substrate for vapor deposition again, thedeposition mask may be displaced laterally and attracted to thepermanent magnet during its movement. If the deposition mask ismisaligned when moving the permanent magnet closer thereto, fine vapordeposition cannot be performed. Furthermore, if a magnetic field of thepermanent magnet is present when attaching or detaching the depositionmask, there is a problem that work required is difficult to perform.

Meanwhile, when an electromagnet is used, the magnetic field is almostset to zero by turning off the application of current to a coil of theelectromagnet, whereas the magnetic field can be generated and used forattraction by the application of current. Thus, at the time of alignmentand the like, the magnetic field is not applied, and after alignment,the magnetic field can be applied, which facilitates the alignmentbetween the substrate for vapor deposition and the deposition mask,attachment and detachment of the deposition mask, and the like.Furthermore, the magnetic field can be generated only by the applicationof current without moving the electromagnet. For this reason, even whenthe magnetic field is generated after the alignment, neither thedeposition mask nor the substrate for vapor deposition will move at all,so that the deposition mask and the substrate for vapor deposition canbe held at precise positions.

However, to generate a large magnetic field when attracting thedeposition mask using the electromagnet, it is necessary to increase thecurrent or increase the number of turns of the coil. This is because thestrength of the magnetic field of the electromagnet is proportional tothe product of the number of turns of the coil of the electromagnet andthe current flowing through the coil. For this reason, when the currentor the number of turns of the coil is increased to strengthen a magneticfield, the amount of generated heat would be increased in either case.As a large current is allowed to flow through the coil of theelectromagnet, an electrical wire having a small resistance isoriginally used for the coil of the electromagnet. However, an aluminumwire, but not a copper wire, tends to be used from the viewpoint ofcost, and hence the electromagnet generates heat more due to an increaseof resistance loss in the wire. Further, when a core (iron core) is usedfor the electromagnet, the generated magnetic field can be increased,but eddy current occurs in the core, and thereby heat is also generatedby the eddy current.

Meanwhile, once heat generation occurs, the heat is transferred to thesubstrate for vapor deposition and the deposition mask, thus increasingthe temperatures of the substrate for vapor deposition and thedeposition mask. The substrate for vapor deposition and the depositionmask are made of different materials and hence have differentcoefficients of linear expansion. For example, when a difference in thecoefficient of linear expansion between the substrate for vapordeposition and the deposition mask is 3 ppm/° C., a length difference of3 μm per degree in a length of a display panel having a length of 1 m,from an edge to another edge, occurs between the substrate for vapordeposition and the deposition mask. For example, assuming that the sizeof one pixel is 60 μm on one side, it is considered that only a pixeldisplacement up to about 15% is allowed at a resolution of 5.6 k. Thus,the pixel displacement due to the difference in the coefficient ofthermal expansion should be limited to 9 μm. In the above-mentionedexample, a temperature increase of 1° C. leads to a difference in thesize of 3 μm, and therefore the temperature increase is limited to 3° C.That is, the temperature increase in each of the substrate for vapordeposition and the deposition mask because of a temperature increase ofthe electromagnet needs to be suppressed to 3° C. or less.

The present invention has been made to solve these problems, and it isan object of the present invention to provide a vapor depositionapparatus and a vapor deposition method which can prevent a temperatureincrease of a deposition mask and the like due to a magnet chuck, byusing the magnet chuck that strongly attracts the deposition mask todispose the substrate for vapor deposition and the deposition mask inproximity to each other during vapor deposition, while being lessinfluenced by the magnetic field during alignment between the substratefor vapor deposition and the deposition mask.

It is another object of the present invention to provide a method ofmanufacturing an organic EL display apparatus which exhibits excellentdisplay quality by using the above-mentioned vapor deposition method.

Means to Solve the Problem

A vapor deposition apparatus according to a first embodiment of thepresent invention comprises: a mask holder for holding a deposition maskincluding a magnetic material; a substrate holder for holding asubstrate for vapor deposition so as to dispose the substrate for vapordeposition in proximity to the deposition mask held by the mask holder;a vapor deposition source provided on a position facing a surface of thedeposition mask opposite to the substrate for vapor deposition andspaced apart from the deposition mask, the vapor deposition source beingadapted to vaporize or sublimate a vapor deposition material; and amagnet chuck provided on a position facing a surface of the substratefor vapor deposition held by the substrate holder, the surface beingopposite to the deposition mask, the magnet chuck being adapted toattract the deposition mask by a magnetic force, wherein the magnetchuck comprises a permanent magnet and an electromagnet.

A vapor deposition method according to a second embodiment of thepresent invention comprises: a step of overlaying a deposition maskincluding a magnetic material, a substrate for vapor deposition, and amagnet chuck for attracting the deposition mask, and disposing thesubstrate for vapor deposition and the deposition mask in proximity toeach other by the attraction of the deposition mask by using the magnetchuck; and a step of depositing a vapor deposition material on thesubstrate for vapor deposition by vaporizing or sublimating the vapordeposition material from a vapor deposition source spaced apart from thedeposition mask, wherein the magnet chuck comprises a permanent magnetand an electromagnet, when the substrate for vapor deposition and thedeposition mask are aligned with each other, the alignment is performedwhile applying a magnetic field in a reverse orientation relative to anorientation of a magnetic field of the permanent magnet, by using theelectromagnet so as to weaken the magnetic field of the permanentmagnet, and after the alignment, the deposition mask is attracted by thepermanent magnet by turning off the magnetic field of the electromagnet.

A method of manufacturing an organic EL display apparatus according to athird embodiment of the present invention comprises: forming at least aTFT and a first electrode on a support substrate; forming an organicdeposition layer by depositing organic materials over a surface of thesupport substrate using the vapor deposition method mentioned above; andforming a second electrode on the organic deposition layer.

Effects of the Invention

According to the vapor deposition apparatus and the vapor depositionmethod according to the first and second embodiments of the presentinvention, the magnet chuck includes the permanent magnet and theelectromagnet. Thus, when the alignment between the substrate for vapordeposition and the deposition mask is performed, the magnetic field ofthe permanent magnet is weakened by the electromagnet, whereby thealignment can be performed while being less influenced by the magneticfield. After the alignment, by turning off the electromagnet, thedeposition mask can be sufficiently attracted by the permanent magnet.Therefore, during the vapor deposition, the electromagnet does notoperate and hence does not generate heat, so that the deposition maskcan be attracted by the strong magnetic field of the permanent magnet.Consequently, the thermal expansion of the substrate for vapordeposition and the deposition mask can also be suppressed. Further, theaccurate deposition pattern can be obtained. As a result, even whendepositing the organic layers, the accuracy of the vapor depositionthereof is improved, so that the vapor deposition can be performed inthe accurate pattern. By applying the vapor deposition apparatus andvapor deposition method to the manufacturing of the organic EL displayapparatus, the display panel with high definition can be obtainedthrough the formation of fine pixels.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a diagram schematically showing a vapor deposition apparatusaccording to an embodiment of the present invention;

FIG. 2 is a schematic diagram of a vapor deposition apparatus accordingto another example of the vapor deposition apparatus shown in FIG. 1;

FIG. 3 is a schematic diagram of a vapor deposition apparatus accordingto still another example of the vapor deposition apparatus shown in FIG.1;

FIG. 4 is a schematic diagram of part of a magnet chuck according to afurther example of the vapor deposition apparatus shown in FIG. 2;

FIG. 5 is a diagram explaining a structural example of a heat pipe shownin FIGS. 3 and 4;

FIG. 6A is an explanatory diagram of a heat pipe for explaining a stillfurther example of a joint between the electromagnet and the heat pipe;

FIG. 6B is a plan view of a heat absorption part shown in FIG. 6A;

FIG. 6C is an explanatory diagram of a wick structure shown in FIG. 6B;

FIG. 6D is an schematic diagram showing a state in which a heat pipeshown in FIG. 6A is incorporated in the vapor deposition apparatus;

FIG. 7A is a diagram showing an example of a driving device for adeposition mask or the like;

FIG. 7B is a diagram showing an example of a structure in which a heatpipe is connected to a vacuum chamber;

FIG. 8 is an enlarged view of an example of a deposition mask;

FIG. 9 is a diagram showing a vapor deposition process in the method ofmanufacturing an organic EL display apparatus according to the presentembodiment; and

FIG. 10 is a diagram showing a state in which organic layers aredeposited in the method of manufacturing the organic EL displayapparatus of the present embodiment.

EMBODIMENT FOR CARRYING OUT THE INVENTION

Hereinafter, vapor deposition apparatuses and vapor deposition methodsaccording to first and second embodiments of the present invention willbe described with reference to the accompanying drawings. As illustratedin FIG. 1, the vapor deposition apparatus of the present embodimentincludes: a mask holder 15 for holding a deposition mask 1 having amagnetic material; a substrate holder 29 for holding a substrate forvapor deposition 2 so as to dispose the substrate for vapor deposition 2in proximity to the deposition mask 1 held by the mask holder 15; avapor deposition source 5 provided on a position facing a surface of thedeposition mask 1 opposite to the substrate for vapor deposition 2 andspaced apart from the deposition mask 1, the vapor deposition sourcebeing adapted to vaporize or sublimate a vapor deposition material 51;and magnet chucks 3 provided on a position facing a surface of thesubstrate for vapor deposition 2 held by a substrate holder 29, thesurface being opposite to the deposition mask 1, the magnet chucks 3being adapted to attract the deposition mask 1 by a magnetic force,wherein the magnet chucks 3 includes a permanent magnet 3A and anelectromagnet 3B. The mask holder 15, the substrate holder 29, and thelike are not illustrated precisely in FIG. 1, but are movable verticallyby a driving device 6 (not illustrated in FIG. 1) at their tip ends, forexample, as described later with reference to FIG. 7A.

(Magnet Chuck)

Although the schematic structure of the vapor deposition apparatus willbe described later, in the vapor deposition apparatus of the embodimentshown in FIG. 1, the deposition mask 1 and the substrate for vapordeposition 2 are disposed side by side vertically. A vapor depositionmaterial is deposited on the substrate for vapor deposition 2 inaccordance with a pattern formed by openings of the deposition mask 1.For this reason, close contact between the deposition mask 1 and thesubstrate for vapor deposition 2 is convenient from the viewpoint ofaccurately transferring the pattern of the deposition mask 1 to thesubstrate for vapor deposition 2. To obtain the close contact(satisfactory accessibility), a method has been conventionally used inwhich a magnet made of a permanent magnet or an electromagnet isdisposed above a surface of the substrate for vapor deposition 2opposite to the deposition mask 1, and the deposition mask 1 including amagnetic material is attracted by a magnetic force of the magnet. Thatis, in the conventional method, only one of a permanent magnet or anelectromagnet is used in the magnetic attraction method. However, asdescribed above, each of both types of magnets has advantages anddisadvantages respectively.

In the present embodiment, both a permanent magnet 3A and anelectromagnet 3B are provided as magnetic force generating means in themagnet chuck 3 for the magnetic attraction. Here, when attracting thedeposition mask during vapor deposition, only the permanent magnet 3A isused for the attraction. On the other hand, in a case where theattraction is not required, such as when disposing the substrate forvapor deposition 2 and the like or when aligning the substrate for vapordeposition 2 and the deposition mask 1, the electromagnet 3B is alsoused to generate another magnetic field oriented in the directionopposite to the orientation of the magnetic field of the permanentmagnet 3A, thereby weakening the existing magnetic field acting on thedeposition mask 1. In other words, the magnet chuck 3 of the presentembodiment has an attraction structure that attracts the deposition mask1 by the permanent magnet 3A and can weaken the magnetic field of thepermanent magnet 3A by using the electromagnet when the magnetic fieldis unnecessary. The term of the magnet chuck 3 as used herein includesthe permanent magnet 3A, the electromagnet 3B, a covering member 34, ayoke 33 to be described later (see FIG. 4), and the like. It should benoted that the electromagnet 3B includes a core 31 and a coil 32. As thepermanent magnet 3A, a normal permanent magnet can be used, but apermanent magnet having a large coersive force is preferable. Theelectromagnet 3B can be made only by the coil 32 which is an electricalwire is wound, but the core (iron core) 31 made of iron or the like ispreferably provided inside the coil 32 because the magnetic field can bestrengthened.

Regarding the arrangement of the permanent magnet 3A and theelectromagnet 3B, as shown in FIG. 1, the permanent magnets 3A and theelectromagnets 3B may be arranged side by side in the lateral direction(in the direction parallel to the surface of the deposition mask 1).Alternatively, as shown in FIG. 2, the permanent magnet 3A and theelectromagnet 3B may be arranged side by side in the axial direction ofthe permanent magnet 3A (in the direction perpendicular to the surfaceof the deposition mask 1). For the structure shown in FIG. 1, ends ofthe permanent magnet 3A and the electromagnet 3B, located at therespective surfaces thereof opposite to the deposition mask 1, arepreferably connected together by a magnetic plate 35 made of a softmagnetic material. Especially, the soft magnetic material is preferablebecause it has such a small coercive force and a large magneticpermeability that the magnetization by the electromagnet 3B is lesslikely to remain. Examples of the soft magnetic material include iron,silicon steel (which is iron with a small amount of Si added thereto andno carbon contained), and the like, which are relatively inexpensive andparticularly preferable as the magnetic plate 35 of the presentembodiment. Other examples of the soft magnetic material includepermalloy (an alloy of Ni and Fe) and the like.

By flowing the current through the coil of the electromagnet 3B toproduce polarities shown in the figure while the permanent magnet 3A andthe electromagnet 3B are connected together by the magnetic plate 35,magnetic field lines in the reverse orientation are generated in thepermanent magnet 3A and the electromagnet 3B to thereby weaken themagnetic field of the permanent magnet 3A. Alternatively, theserespective polarities may be reversed those shown in the figure. For thearrangement shown in FIGS. 1 and 2, as the permanent magnet 3A and theelectromagnet 3B repel each other, both the permanent magnet 3A and theelectromagnet 3B need to be surely fixed together by the coveringmaterial 34 or the like not to be separated from each other.

Further, when the permanent magnets 3A and the electromagnets 3B arearranged side by side as shown in FIG. 1, the magnetic plate 35 may beremoved, and the electromagnets 3B may be arranged to surround thepermanent magnets 3A such that the electromagnets 3B are located asclose as possible to the permanent magnets 3A. In this case, thepolarity of the electromagnet 3B is set different from the polarity ofthe permanent magnet 3A, and for example, the polarity of the surface ofthe electromagnet 3B facing a touch plate 4 needs to be set at S to thepolarity N of the surface of the permanent magnet 3A facing the touchplate 4 shown in FIG. 1. In this way, the polarity of the permanentmagnet 3A can be weakened, though it cannot be completely cancelled. Asa structure obviously showing this case, a magnetic field oriented inthe reverse direction relative to the magnetic field of the permanentmagnet 3A can also be generated by winding an electrical wire around therod-shaped permanent magnet 3A, or winding a coil 32 around acylindrical body to cover the permanent magnet 3A. Consequently, themagnetic field of the permanent magnet 3A and the magnetic field of theelectromagnet 3B become coaxial and are easily cancelled each other. Itshould be noted that only the coil 32 without the core 31 can configurethe electromagnet 3B. The polarity of the above-mentioned electromagnet3B at its tip in the orientation at which a right screw travels based onthe right hand screw rule becomes the N pole, depending on theorientation of a current flowing through the coil 32 of theelectromagnet 3B. Therefore, the orientation of the magnetic field ofthe electromagnet 3B can be set free by adjusting the orientation of thecurrent depending on the orientation of the permanent magnet 3A.

The application of the voltage is changed by a control circuit of apower supply circuit (not shown), so that the orientation of themagnetic field can be selected. The intensity of the magnetic field bythe electromagnet 3B does not need to completely cancel the magneticfield of the permanent magnet 3A, and may be about one-tenth ( 1/10) ormore and about one-half (½) or less of the intensity of the magneticfield of the permanent magnet 3A. This is because its purpose is toweaken a strong attraction force at the time of alignment, or the like.

As described above, both the permanent magnet 3A and the electromagnet3B are arranged to generate their reverse magnetic fields. Thus, oncethe electromagnet 3B is operated, the magnetic field of the permanentmagnet 3A is cancelled. Consequently, the electromagnet 3B can beoperated to weaken the influence of the magnetic field when thesubstrate for vapor deposition 2 or the deposition mask 1 are replacedor when the substrate for vapor deposition 2 and the deposition mask 1are aligned. Meanwhile, after the completion of the alignment betweenthe substrate for vapor deposition 2 and the deposition mask 1, theapplication of current onto the electromagnet 3B is turned off, and onlythe permanent magnet 3A is operated. In this way, the magnetic field canbe strengthened only by an operation of the power source without movingthe magnet chuck 3. Once the current in the electromagnet 3B is turnedoff in the structure shown in FIGS. 1 and 2, the N and S poles shown inFIGS. 1 and 2 eliminated from the electromagnet 3B, and thereby the core31 of the electromagnet 3B acts merely as the magnetic material. As aresult, the structure shown in FIG. 1 has the same function as ahorseshoe-shaped permanent magnet and applies the strong magnetic fieldof the permanent magnet 3A to the deposition mask 1. In the structureshown in FIG. 2, the S pole is generated on the surface of the core 31opposite to the permanent magnet 3A. Consequently, the magnet chuck 3hardly needs to be moved after the alignment between the deposition mask1 and the substrate for vapor deposition 2, so that the deposition mask1 can be sufficiently attracted to the substrate for vapor deposition 2without causing the relative movement between the substrate for vapordeposition 2 and the deposition mask 1.

The time for attaching the substrate for vapor deposition 2 and aligningthe deposition mask 1 relative to the substrate for vapor deposition 2is about 10 seconds at the maximum and much shorter than a vapordeposition time of about 120 seconds. Consequently, Joule heat generatedby the current flowing through the coil of the electromagnet 3B is verysmall, whereby a temperature increase of the substrate for vapordeposition 2 and the deposition mask 1 is significantly reduced. Also,when the substrate for vapor deposition 2 is detached after completionof the vapor deposition, this operation is preferably performed bydriving the electromagnet 3B to weaken the magnetic field. This casedoes not need a delicate operation, such as the alignment, so that thedetaching can be completed in a much shorter time, thus reducing theheat generation of the magnet chuck 3. In short, as the operation timeof the electromagnet 3B as a heat generating source is very short, theinfluence of the thermal expansion on the deposition mask 1 or the likedue to the heat generation of the electromagnet 3B can be suppressed asmuch as possible.

On the other hand, the vapor deposition apparatus continuously performsvapor deposition by sequentially replacing the substrate for vapordeposition 2. Thus, although the amount of generated heat is small, theheat might accumulate. However, during the operation of the relativealignment (so-called alignment) between the substrate for vapordeposition 2 and the deposition mask 1, the deposition mask 1 is hardlyattracted by the magnet chuck 3, whereby the substrate for vapordeposition 2 and the deposition mask 1 are not in close contacttherebetween and are slightly spaced apart from each other. Thus, evenif the temperature of the substrate for vapor deposition 2 increases,the heat is not immediately transferred to the deposition mask 1 and notaccumulated in the deposition mask 1. Furthermore, as the substrate forvapor deposition 2 is replaced after the vapor deposition, a cooledsubstrate for vapor deposition 2 is carried in the vapor depositionapparatus every time it is replaced, so that heat is less likely to beaccumulated in the substrate for vapor deposition 2. In particular, ifthe substrate holder 29 for holding the substrate for vapor deposition 2and the mask holder 15 for holding the deposition mask 1 are not incontact with each other and are thermally isolated, for example, by aheat insulating member or the like, the accumulation of heat in thedeposition mask 1 is reduced. An example of this specific structure willbe described later with reference to FIG. 7A. That is, in the presentembodiment, unless heat from the substrate for vapor deposition 2 isdirectly transferred to the deposition mask 1 (i.e., if the depositionmask 1 is positioned with a slight gap from the substrate for vapordeposition 2), the deposition mask 1 hardly increases its temperature.As a result, by suppressing the thermal conduction between the substrateholder 29 and the mask holder 15, the vapor deposition apparatus isprovided which is less likely to be influenced thermally, in otherwords, which can easily reduce the misalignment of the vapor depositionpattern due to the thermal expansion of the deposition mask 1.

On the other hand, when a sufficient attraction force is not obtainedonly by the magnetic force of the permanent magnet 3A, the orientationof the current can also be changed by a control circuit of a powersupply circuit (not shown) such that after the alignment, the magneticfield of the electromagnet 3B has the same orientation as theorientation of the magnetic field of the permanent magnet 3A. In thiscase, as the electromagnet 3B is used just to assist the permanentmagnet 3A, the current only needs to be one-tenth ( 1/10) or less of thecurrent used when the necessary magnetic field is obtained only by theelectromagnet 3B, and thus heat generation is reduced significantly.However, cooling of the magnet chuck 3 is preferably performedsimultaneously when the temperature of the magnet chuck 3 increases dueto generation of Joule heat at the time of mounting and alignment of theabove-mentioned substrate for vapor deposition 2 or the like,accumulation of heat, and the like. The cooling structure of the magnetchuck 3 will be described later.

In an example shown in FIG. 2, the above-mentioned relationship ofvertical overlap between the permanent magnet 3A and the electromagnet3B shown in FIG. 2 is configured such that the permanent magnet 3A isprovided to face the touch plate 4 (the substrate for vapor deposition2), and the electromagnet 3B is provided on the surface of the permanentmagnet 3A opposite to the substrate for vapor deposition 2. However, thevertical relationship is not limited to this example. It should be notedthat as mentioned above, when heat generation might occur, cooling isnecessary. When cooling is performed by the heat pipe 7 (see FIG. 3)described later, the vertical relationship shown in FIG. 2 ispreferable.

In a case where the electromagnet 3B is used and the current is turnedon and off, when the current rapidly increases or the current rapidlychanges to 0, electromagnetic induction occurs, causing a current toflow through a closed circuit. For example, in a case where organiclayers of an organic EL display apparatus are deposited, a closedcircuit, such as a thin film transistor (TFT) for driving, is providedon a support substrate. After the organic layers and both electrodes areformed, the closed circuit is configured. If a current caused by theelectromagnetic induction flows through the closed circuit, elements,such as the TFT and the organic layer, are destroyed. The occurrence ofthe electromagnetic induction is caused by a rapid change of themagnetic field. Thus, the rapid change of the magnetic field by theelectromagnet must be avoided. From this point of view, the problem ofelectromagnetic induction can be solved by inserting a capacitor of, forexample, about 5000 or more in parallel with the electromagnet 3B into apower supply circuit (not shown) of the electromagnet 3B, or byproviding a plurality of terminals in the coil to gradually increase ordecrease the turn number of the coil to which the current is applied, orby applying the current in a large rising time. However, since in thepresent embodiment, the magnetic field is applied by the electromagnetin an orientation to cancel the magnetic field generated by thepermanent magnet 3A, the influence of this electromagnetic induction canalso be considered to be small.

(Outline of Structure of Vapor Deposition Apparatus)

The vapor deposition apparatus according to an embodiment of the presentinvention is illustrated in a schematic view of FIG. 1. A mask holder 15and a substrate holder 29 are provided to be movable vertically so thatthe deposition mask 1 and the substrate for vapor deposition 2 aredisposed in proximity to each other inside a vacuum chamber 8 (see FIG.3; however, the vacuum chamber 8 is omitted in FIGS. 1 and 2). Thesubstrate holder 29 is connected to a driving device 6 so as to hold theperipheral edges of the substrate for vapor deposition 2 with aplurality of hook-shaped arms and to be capable of ascending anddescending vertically, for example, as shown in FIG. 7A. When replacingthe substrate for vapor deposition 2 or the like, the deposition targetsubstrate 2 carried into the vacuum chamber 8 by robot arms is receivedby the hook-shaped arms, and the substrate holder 29 is lowered untilthe substrate for vapor deposition 2 is in proximity to the depositionmask 1. The mask holder 15 also has substantially the same configurationas the substrate holder 29. An imaging device (not shown) is alsoprovided for performing alignment.

The driving device 6 can be formed in various configurations. However,in an example of the mask holder 15 shown in FIG. 7A, for example, arack 61 is provided to the tip end part of the mask holder 15, and apinion 62 is rotated by a motor 63 to be capable of vertically movingthe mask holder 15. The driving device 6 may be formed by attaching ahousing 67 to a support plate 65 mounted in the chamber 8 with screws68. In the example shown in FIG. 7A, configured to block heat conductionbetween the above-mentioned mask holder 15 and the substrate holder 29,a spacer 66 (heat insulating member) formed of a heat insulatingmaterial is interposed between the housing 67 and the support plate 65.In this case, it is preferable that each screw 68 is not made of metal,but plastic or the like which is hard to transfer heat. Consequently,even when not only the mask holder 15 but also the substrate holder 29is mounted on the same support plate 65 by means of the same structure,heat block is sufficiently achieved because the mask holder 15 and thesubstrate holder 29 are provided with a heat insulating member (spacer66) interposed therebetween.

The touch plate 4 is supported by a support frame 41 and connected, viathe support frame 41, to a driving device that lowers the touch plate 4until the touch plate 4 contacts the substrate for vapor deposition 2.The touch plate 4 is lowered to planarize the substrate for vapordeposition 2, which is pressed by the touch plate 4 not to cause warp.Although not shown in the figure, the touch plate 4 may flow the coolingwater therein. Further, a vapor deposition source 5 is provided on theposition facing a surface of the deposition mask 1 opposite to thesubstrate for vapor deposition 2 and spaced apart from the depositionmask 1, and the vapor deposition material 51 is evaporated orsublimated.

The substrate for vapor deposition 2 and the deposition mask 1 arealigned with each other in a state where the touch plate 4 and themagnet chuck 3 are lowered to bring the touch plate 4 into contact withthe substrate for vapor deposition 2. When the deposition mask 1 and thesubstrate for vapor deposition 2 are aligned with each other, relativemovement between the substrate for vapor deposition 2 and the depositionmask 1 is performed while imaging alignment marks respectively formed onthe deposition mask 1 and the substrate for vapor deposition 2. Thus,the vapor deposition apparatus also includes a fine movement device tofinely move the substrate for vapor deposition 2 or the like. Whenperforming this alignment, it is preferable that strong attraction bythe magnet chuck 3 is not generated. In the present embodiment, asmentioned above, during the alignment, the electromagnet 3B is alsodriven while attracting the deposition mask by the permanent magnet 3Ato weaken its attraction force. Thus, there is no possibility that thesubstrate for vapor deposition 2 and the deposition mask 1 are stronglyin contact with each other and cannot be moved finely. Consequently, theprecise positional adjustment can be easily performed in a short periodof time. Further, after the completion of the positional adjustment,only by turning off the power supply of the electromagnet 3B, thedeposition mask 1 is attracted toward the substrate for vapor deposition2 by the strong attraction force of the permanent magnet 3A.

In the example shown in FIG. 1, the permanent magnets 3A and cores 31and coils 32 of the electromagnets 3B are covered with the coveringmaterial 34. Consequently, a unit magnet (a pair of permanent magnet 3Aand electromagnet 3B) is fixed, which facilitates handling of theinstallation. In addition, when cooling is performed by a heat pipe 7(see FIG. 3) to be described later, the contact between the heat pipe 7and the covering material 34 of the magnet chuck 3 can be easilyobtained over a wider area. Furthermore, as heat generated in the coil32 is also transferred easily from the periphery thereof to the coveringmaterial 34, the cooling effect can be easily improved. Moreover, asshown in FIG. 1, the deposition mask 1 has a structure in which a frame14 attached to the periphery of the deposition mask 1 is held by themask holder 15. Consequently, the deposition mask 1 is held withoutbeing deformed.

As mentioned above, each magnet chuck 3 includes the permanent magnet 3Aand the electromagnet 3B. As the electromagnet 3B, various types ofelectromagnets can be used, such as one having a core 31, one having ayoke 33 (see FIG. 4), and one having the covering material 34 and thelike. The outer shape of the core 31 may be a polygon, such as aquadrangle, or a circle. For example, when the size of the depositionmask 1 is about 1.5 m×1.8 m, an unit electromagnet 3B which is includedin an unit magnet chuck 3 (a set of an unit permanent magnet 3A and theunit electromagnet 3B) shown in FIG. 2, has the core 31 with a crosssection of about 5 cm square, and a plurality of unit magnet chucks canbe arranged side by side according to the size of the deposition mask 1as shown in FIG. 2 (the number of unit electromagnets is shown on alaterally reduced scale in FIG. 2 by reducing number of unit electromagnets. The ratio of the number of the permanent magnets 3A to that ofthe electromagnets 3B is not necessarily 1:1 and the number ofelectromagnets 3 may be smaller than that of the permanent magnets 3A).Although the examples shown in FIGS. 1 and 2 do not illustrate theconnection between the coils of the electromagnets 3B, the coils 32wound around the respective cores 31 may be connected in series or inparallel. In addition, several units of the electromagnets 3B may beconnected in series. A current may be independently applied to a part ofthe unit electromagnet.

As shown in FIG. 8, the deposition mask 1 includes a resin layer 11, ametal support layer 12, and a frame (frame body) 14 attached around theresin layer and the metal support layer. As shown in FIG. 1, thedeposition mask 1 is provided by placing the frame 14 on the mask holder15. The metal support layer 12 is formed using magnetic material.Consequently, an attraction force acts between the permanent magnet 3Aand the deposition mask 1, so that the deposition mask 1 is attracted tothe permanent magnet 3A with the substrate for vapor deposition 2interposed therebetween. It should be noted that the metal support layer12 may be formed of a ferromagnetic material. In this case, the metalsupport layer 12 is magnetized by the strong magnetic field of thepermanent magnet 3A (Note that to magnetize means to be in a state wherethe strong magnetization remains even after removing external magneticfield). The deposition mask 1 may be formed as one large panel like alarge-sized television, or may be formed as one deposition mask obtainedby combining a plurality of small panels like a smartphone.

For example, Fe, Co, Ni, Mn, or an alloy thereof can be used as themetal support layer 12. Among them, invar (an alloy of Fe and Ni) isparticularly preferable because it has a small difference in thecoefficient of linear expansion from the substrate for vapor deposition2 and hardly expands due to heat. The metal support layer 12 is formedto have a thickness of about 5 μm to 30 μm.

It should be noted that in FIG. 8, an opening 11 a of the resin layer 11and an opening 12 a of the metal support layer 12 are tapered to becomesmaller toward the substrate for vapor deposition 2 (see FIG. 1). Thereason for this is to prevent the vaporized or sublimated vapordeposition material from being blocked when the vapor depositionmaterial is deposited. It should be noted that various types of vapordeposition sources 5, such as a point-shaped, a linear-shaped, or aplaner-shaped one, can be used as the vapor deposition source 5. Forexample, vapor deposition is performed over the entire surface of thesubstrate for vapor deposition 2 by scanning the entire substrate forvapor deposition, for example, from the left end of the paper surface tothe right end thereof in the FIG. 1, using the vapor deposition source5, called a line-source. In the line-source, crucibles are arrangedlinearly therein, over the entire length which has the same length asthe width of the deposition mask 1 (the length in the directionperpendicular to the paper surface of FIG. 1). Therefore, theabove-mentioned taper is formed so that the vapor deposition materialvaporize or sublimate from various directions and that even the vapordeposition material coming from an oblique direction can reach thesubstrate for vapor deposition 2 without being blocked.

The example shown in FIG. 2 differs from the example shown in FIG. 1only in the arrangement relationship between the permanent magnet 3A andthe electromagnet 3B of the magnet chuck 3, but these examples are thesame in the other configurations. In FIG. 2, the permanent magnet 3A andthe electromagnet 3B are overlapped each other in the axial direction,and the configurations of other components are the same as those shownin FIG. 1. The same parts are denoted by the same reference numerals,and the description thereof will be omitted. Even if the permanentmagnet 3A and the electromagnet 3B are arranged vertically in thismanner, the magnetic field of the permanent magnet 3A as a whole isoffset and weakened by the magnetic field of the electromagnet 3B. Thisstructure is preferable because many permanent magnets 3A can bearranged. However, also in this case, the repulsive force acts betweenthe permanent magnet 3A and the electromagnet 3B in the same manner asthe magnetic plate 35 is attached as shown in FIG. 1. Because of this,it is necessary to firmly fix both the permanent magnet 3A and theelectromagnet 3B. From this viewpoint, as mentioned above, anelectromagnet is preferably formed around the permanent magnet 3A.

As mentioned above, the number of permanent magnets 3A does not need tobe the same as the number of electromagnets 3B, and absolute values ofthe magnetic fields in the reverse orientation generated by thepermanent magnet 3A and the electromagnet 3B may not be the same witheach other. In short, if the magnetic field of the permanent magnet 3Ais weakened to some extent, the influence of the magnetic field onalignment or the like can be avoided. When the number of electromagnets3B is small and the magnetic field to be used for cancellation is toosmall, the current can be increased to adjust the magnetic field of theelectromagnets 3B. Further, although in the example shown in FIG. 1, thepermanent magnets 3A and the electromagnets 3B are arranged side byside, for example, the electromagnet 3B can be arranged in the vicinityof an intersection point of the diagonal lines of the four permanentmagnets 3A by shifting the electromagnet 3B by half a pitch.

FIGS. 3 and 4 show an example in which a cooling structure is formed onthe magnet chuck 3. That is, the present embodiment is characterized inthat cooling means for cooling the magnet chuck 3 is provided, and hencethis cooling structure will be described below. Hereinafter, adescription of other components will be omitted. As mentioned above, inthe present embodiment, although the electromagnet 3B is included, it isoperated for a very short period of time. Thus, the problem of heatgeneration is suppressed effectively. As mentioned above, if thesubstrate holder 29 and the mask holder 15 are thermally insulated fromeach other, the substrates for vapor deposition 2 are replaced one afteranother, so that thermal accumulation is unlikely to occur. However,when the temperature of the substrate for vapor deposition 2 rises atthe time of the alignment, the substrate for vapor deposition 2 and thedeposition mask 1 are in close contact with each other at the time ofthe subsequent vapor deposition, so that there is a possibility ofthermal conduction to the deposition mask 1. Even when vapor depositionis continuously performed by replacing the substrate for vapordeposition 2, the operation of the electromagnet 3 for a next substratefor vapor deposition 2 may be performed before a little heat transferredto the deposition mask 1 is released to completely cool down thedeposition mask 1. Consequently, the similar thermal conduction couldoccur to the deposition mask 1. When the magnetic force of the permanentmagnet 3A is weak, the lack of the magnetic force may be compensated forby the magnetic field of the electromagnet 3B as mentioned above. Insuch a case, the current through the electromagnet 3B may be small, butmust flow therethrough during the entire vapor deposition time.

Meanwhile, when the temperature of the electromagnet 3B rises, thetemperature of the substrate for vapor deposition 2 or the depositionmask 1 arranged near the electromagnet 3B rises due to the thermalconduction. Both the substrate for vapor deposition 2 and the depositionmask 1 are formed of different materials and have different coefficientsof thermal expansion (coefficients of liner expansion). Because of this,when the temperature of the substrate for vapor deposition 2 or thedeposition mask 1 rises, there could occur the misalignment between anopening pattern of the deposition mask 1 and the position of thesubstrate for vapor deposition 2 to be deposited. As such, the vapordeposition of the accurate pattern is interrupted, and pixels areblurred, thus failing to obtain the high-definition display panel. Forthis reason, a temperature increase of the magnet chuck 3 must beavoided as much as possible. In this case, since the inside of thevacuum chamber 8 is a vacuum atmosphere, the effective heat dissipationof the magnet chuck 3 is difficult to perform. However, as a result ofextensive studies, the present inventors have found that heatdissipation can be performed very efficiently even for a slighttemperature increase by dissipating heat using the heat pipe 7 (see FIG.5). In such a case, by bringing the heat pipe 7 into contact with themagnet chuck 3 at an area as large as possible, i.e., at least an areaequal to or larger than the cross-sectional area within the innerperimeter of the coil 32 of the electromagnet 3B, the efficiency of heatdissipation is improved.

(Cooling Structure of Magnet Chuck)

As a typical example, the heat pipe 7 has a structure as shown in FIG.5. That is, a wick 76 for moving a liquid by capillary action is formedon an inner wall of a vacuum-sealed pipe (case; container) 75 made of,for example, copper or the like, whereby a vacuum (low-pressure)structure is formed in which a small amount of an operating fluid (notshown) made of water or the like is sealed in the pipe 75. In thisstructure, when the heat absorption part 71, which is one end part, isheated by ambient heat, an operating fluid evaporates to generate vapor,thus increasing the internal pressure of the pipe 75. The vapor passesthrough a space 73 and is condensed and liquefied in the heatdissipation part (cooling part) 72, which is the other end part. Theliquefied working fluid travels toward the heat absorption part 71 bythe capillary action in the wick 76 formed on the inner wall of the pipe75. Owing to the latent thermal conduction that accompanies suchevaporation and the condensation, a large amount of heat is transportedfrom the heat absorption part 71 to the heat dissipation part 72 even ata small temperature difference. The thermal conduction efficiency of theheat pipe 7 is said to reach even 100 times the thermal conductionefficiency of a round copper rod. The wick 76 may have a structure, suchas a wire mesh, a porous body, a sponge, or the like, as long as theliquid travels through the structure due to the capillary action.

As mentioned above, when the heat pipe 7 is disposed laterally, thecondensed liquid is conveyed to the heat absorption part 71 through thewick 76. However, for example, when the heat pipe 7 is arranged in thelongitudinal direction (vertical direction), and on its lower side, theheat absorption part 71 is positioned (that is, a part of the heat pipe7 having a high temperature is disposed on the lower position of theheat pipe 7), the liquid is evaporated on the lower position to formvapor, and the vapor rises and is condensed in the heat dissipation part72. In this case, even without the wick 76, the liquefied liquid fallsunder by its own weight and returns to the heat absorption part 71. Thisis called a thermosiphon type. In the present embodiment, either type ofheat pipe 7 can be used. For example, the wick 76 may be present whenthe heat pipe 7 is arranged in the longitudinal direction.

Such a heat pipe 7 is not limited to the rod shape as shown in FIG. 5,but may be formed, for example, in a flat shape (plate shape). When theheat pipe is formed in the flat shape, then it can be rolled andembedded in the core 31 of the electromagnet 3B. In this way, themagnetic field lines within the core 31 are hardly affected by the heatpipe. Moreover, for example, as shown in Thermal Science & Engineering,pages 41-56, Vol. 2, No. 3 (2015) to be described later, a loop-typeheat pipe structure can have a plate-shaped heat absorption partprovided over the entire front surface (surface facing the substrate forvapor deposition 2) of the above-mentioned magnet chuck 3. An example inwhich the simple rod-shaped heat pipe 7 is joined with the magnet chuck3 is shown in FIGS. 3 and 4 mentioned above.

In the example shown in FIG. 3, the permanent magnet 3A and theelectromagnet 3B are arranged in the axial direction with the entireperipheries thereof covered with the covering material 34, which is thesame structure as the vapor deposition apparatus shown in FIG. 2. Inaddition, in the example of FIG. 3, the heat pipe 7 is provided incontact with the upper surface of the core 31 of the electromagnet 3B.The cross-sectional area of the bottom surface of the heat pipe 7 issubstantially the same as that within the inner perimeter of the coil 32of the electromagnet 3B, but the heat absorption part 71 of the heatpipe 7 is embedded in the covering material 34. Thus, in addition to thecontact area between the core 31 and the heat pipe 7, an area of theside surface of the heat pipe 7 embedded in the inside of the coveringmaterial 34 also serves as the contact area. The heat dissipation part72, which is an end part of the heat pipe 7 opposite to the heatabsorption part 71, is guided out to the outside of the vacuum chamber8, put into an exhaust heat tank 95, and is air-cooled, water-cooled, orthe like.

When replacing the substrate for vapor deposition 2 or the depositionmask 1, the magnet chuck 3 and the touch plate 4 also need to be liftedupward. And the magnet chuck 3 and the touch plate 4 also need to belowered again after the replacement. For this reason, the heat pipe 7cannot be directly fixed to a wall surface of the vacuum chamber 8 byairtight sealing. In such a case, as shown in FIG. 7B, the heat pipe 7is preferably fixed to the vacuum chamber 8 via a bellows 96. Thedistance by which the magnet chucks 3 and the like are lifted whenreplacing the substrates for vapor deposition 2 or the like is about 100mm or less. Hence, any bellows 96 that is capable of expanding andcontracting to such an extent may be used.

However, while the magnet chuck 3 and the touch plate 4 have fixedstructures, the deposition mask 1 and the substrate for vapor deposition2 may be lowered so as to replace the substrate for vapor deposition 2and the like, and then lifted to and disposed at a predeterminedposition. With such a structure, the heat pipe 7 can be directly bondedand sealed to the vacuum chamber 8 without using the bellows 96. In thecase of using the bellows 96 described above, if the bellows 96 isbroken, the interior of the vacuum chamber 8 is exposed to theatmosphere, causing contamination of the inner wall. When the inner wallof the vacuum chamber 8 is contaminated, the inner wall needs to becleaned because the vacuum chamber 8 acts as a gas source. Owing tothis, the bellows 96 preferably has a double structure. For example, thestructure shown in FIG. 3 is preferably configured to cover the heatpipe 7 between the outer wall of the exhaust heat tank 95 and the outerwall of the vacuum chamber 8 with a coating cover (not shown) so as toinclude the bellows 96 (see FIG. 7B).

The structure shown in FIG. 4 is a modified example of the example shownin FIG. 3. In this example, the C-type yoke (E-type yoke formed with thepermanent magnet 3A and the core 31 of the electromagnet 3B) 33 isconnected to one end part of the unit magnet which the permanent magnet3A and the electromagnet 3B are connected each other in the axialdirection. The end surfaces of the yoke 33 are disposed to besubstantially flat with a first end surface (a surface facing thesubstrate for vapor deposition 2) which is a surface of the permanentmagnet 3A opposite to the electromagnet. With such a structure, themagnetic field lines of the permanent magnet 3A are guided from the Spole of the surface opposite to the first end surface of the permanentmagnet 3A, in the example shown in the figure to the end surfaces ofeach yoke 33, via the core 31 of the electromagnet 3B having a smallmagnetic resistance and the yoke 33. Consequently, strong magnetic fieldlines are formed between the first end surface of the permanent magnet3A and the end surfaces of the yoke 33, so that a strong magnetic fieldcan also be applied to the deposition mask 1 provided in the vicinity ofthe first surface of the permanent magnet and the end surfaces of theyoke 33. In this case, the yoke 33 also becomes a part of the magnetchuck 3. The yoke 33 is formed using a magnetic material, such as iron,similar to that of the core 31.

According to the example shown in FIG. 4, when the magnet chucks 3 arecooled by the heat pipes 7 as in the above-mentioned example, thecontact area between the heat pipes 7 and the magnet chucks 3 can beincreased. That is, the width of the yoke 33 can be made larger than thewidth (diameter) of the core 31. Thus, the contact area between the heatpipe 7 and the magnet chuck 3 can be increased. By increasing thecontact area, the heat of the magnet chuck 3 can be further releasedthrough the heat pipes 7. As shown in FIG. 4, the heat generated in thecoils 32 can be more effectively transferred to the covering material 34by covering the magnet chuck 3 including the yoke 33 with theabove-mentioned covering material 34, and the contact area between theheat pipe 7 and the magnet chuck 3 can be further increased by embeddingthe heat pipes 7 in the covering material 34. As a result, the heat ofthe magnet chuck 3 can be effectively released.

Regarding the yoke 33, the yoke 33 is not limited to a structure inwhich the electromagnet 3B is provided on the permanent magnet 3A andthe yoke 33 is provided thereon. The electromagnet 3B may be provided toface the touch plate 4 (substrate for vapor deposition 2), the permanentmagnet 3A may be disposed thereon, and the yoke 33 may be providedthereon. However, as described above, if the heat pipe 7 is provided,the arrangement shown in FIG. 4 is preferable. This is because thepurpose is to release the generated heat which is generated by theelectromagnet 3B.

Each of the above-mentioned examples has the structure in which theentire magnet chuck 3 is covered with the covering material 34. Thisstructure has advantages that handling is easy because the magnet chuck3 is covered with the covering material 34, and that the coil can beeasily dissipate heat when the magnet chuck 3 is cooled by the heat pipe7. However, the coating material 34 may not be provided. When the magnetchuck is cooled by the heat pipe 7, the contact area between the heatpipe 7 and the magnet chuck 3 can be increased by widening the yoke 33even if the covering material 34 is not provided, as described above.Further, by embedding a part of the heat pipe 7 in the yoke 33 or thecore 31, the contact area therebetween can be increased.

FIGS. 6A to 6D show other example of the cooling structure, in which theheat pipe 7 has the same structure as the loop-type heat pipe describedin Thermal Science & Engineering, pages 41-56, Vol. 2, No. 3 (2015),mentioned above. FIGS. 6A to 6C show a side view of the loop-type heatpipe 7, an explanatory plan view of the heat absorption part, and astructural example of the wick, respectively. That is, as shown in anexplanatory plan view of the heat absorption part 71 in FIG. 6B, aplurality of wick structure bodies 80 (six in the example shown in FIG.6B) are embedded in a case 81 made of copper or the like. Each wickstructure body 80 has a wick core 83 at its center part, as shown inFIG. 6C by the cross-sectional structure, a wick 82 is formed in acogwheel-like shape (gear-like shape) around the wick core, and grooves84 are formed between respective blades (teeth) of the cogwheel-likeshaped (gear-like shaped) wick 82 to provide a path for vapor.

The wick structure body 80 can be formed to have the size of, forexample, about 8 mm×9 mm, (the thickness of the heat absorption part 71can be reduced by crushing it in the height direction into an ovalshape). In this case, the groove 84 can be formed to have a depth of 1mm and a width of about 0.5 mm. The wick 82 and the wick core 83 aremade of, for example, a porous material, such as PTFE(polytetrafluoroethylene). Pores in this porous material can be formedwith an average radius of about 5 μm and a porosity of about 35%. Such awick 82 is formed integrally with the grooves 84, for example, bymolding powdery PTFE.

In FIGS. 6A and 6B, reference numeral 86 denotes a vapor collectingportion, 87 denotes a vapor pipe, 88 denotes a liquid pipe, 89 denotes aliquid reservoir tank, 90 denotes a connection pipe, and 85 denotes aliquid distributing portion. The basic operation of this device is thesame as the operation of the heat pipe shown in FIG. 5 described above,but in this device, liquid is sucked by the capillary action of eachwick core 83 in the liquid distributing portion 85 to proceed from thewick core 83 to the capillary of the wick 82, and is evaporated by theheat from the case 81. The evaporated vapor proceeds to a vaporcollecting portion 86 through spaces defined by the grooves 84. Itshould be noted that as shown in FIG. 6A, the grooves 84 are sealed bythe wick 82 between the grooves 84 and the liquid distributing portion85, while the groove 84 penetrates the vapor collecting portion 86.Thus, when the pressure in the groove 84 increases due to evaporation ofthe liquid, the vapor advances toward the vapor collecting portion 86.Then, the vapor is cooled in the heat dissipation part 72 through thevapor pipe 87 to be liquefied, and the resulting liquid is accumulatedin the liquid reservoir tank 89 through the liquid pipe 88. The liquidstored in the liquid reservoir tank 89 returns to the liquiddistributing portion 85 via the connection pipe 90 by gravity. As thevapor is liquefied in the heat dissipation part 72, the pressure in thecase 81 decreases, and the liquid further evaporates in the heatabsorption part (evaporating part) 71. The above-mentioned processes arerepeated. The heat absorption part (evaporating part) 71 is formed tohave such a structure, thereby making it possible to cool the wide area.

By using such a loop-type heat pipe 7, for example, as shown in FIG. 6D,the heat pipe 7 can be installed at the front surface (surface facingthe deposition mask 1) of the magnet chucks 3 as it is. In the exampleshown in FIG. 6D, the heat absorption part 71 of the heat pipe 7 isprovided in place of the touch plate 4 of the vapor deposition apparatusshown in FIG. 1. However, the conventional touch plate 4 may be providedas it is, and the loop-type heat pipe may be inserted between the touchplate 4 and the magnet chucks 3. With such a structure, the surfaces ofthe magnet chucks 3 facing the deposition mask 1 are cooled, which isthe most appropriate for reducing the temperature increase of thedeposition mask 1. In FIG. 6D, the same parts as those in FIG. 1 aredenoted by the same reference numerals, and a description thereof willbe omitted. Reference numeral 91 denotes a heat dissipation plate. Thatis, the heat dissipation part 72 can be cooled by air cooling or thelike.

(Vapor Deposition Method)

Next, a vapor deposition method according to a second embodiment of thepresent invention will be described. As shown in FIG. 1 described above,the vapor deposition method in the second embodiment of the presentinvention comprises: a step of overlaying the deposition mask 1including a magnetic material, the substrate for vapor deposition 2, andthe magnet chucks 3 for attracting the deposition mask 1, and disposingthe substrate for vapor deposition 2 and the deposition mask 1 inproximity to each other by the attraction of the deposition mask 1 usingthe magnet chuck 3; and a step of depositing the vapor depositionmaterial 51 on the substrate for vapor deposition 2 by vaporizing orsublimating the vapor deposition material 51 from the vapor depositionsource 5 spaced apart from the deposition mask 1, wherein the magnetchuck 3 includes the permanent magnet 3A and the electromagnet 3B, whenthe substrate for vapor deposition 2 and the deposition mask 1 arealigned with each other, the alignment is performed while applying amagnetic field in a reverse orientation relative to the orientation ofthe magnetic field of the permanent magnet 3A by using the electromagnet3B so as to weaken the magnetic field of the permanent magnet 3A, andafter the alignment, the deposition mask 1 is attracted by the permanentmagnet 3A by turning off the magnetic field of the electromagnet 3B.

As mentioned above, the substrate for vapor deposition 2 is overlaid onthe deposition mask 1. The overlapping is performed by holding thedeposition mask 1 and the substrate for vapor deposition 2, carried inby robot arms (not shown) by means of a mask holder 15 and a substrateholder 29, respectively, and then lowering the mask holder 15 and thesubstrate holder 29 to respective predetermined positions. The alignmentbetween the substrate for vapor deposition 2 and the deposition mask 1is performed as follows. The alignment may be performed by moving thesubstrate for vapor deposition 2 relative to the deposition mask 1 whileobserving alignment marks respectively formed on the deposition mask 1and the substrate for vapor deposition 2 by means of the imaging device(not shown). At this time, as mentioned above, the alignment can beperformed in a state where the force attracting the deposition mask 1 isweakened by operating the electromagnets 3B. According to this method,the opening 11 a (see FIG. 8) of the deposition mask 1 can be alignedwith a corresponding vapor deposition position on the substrate forvapor deposition 2 (for example, a pattern of a first electrode 22 on asupport substrate 21 as shown in FIG. 9, in the case of an organic ELdisplay apparatus to be described later). After the alignment, theoperation of the electromagnets 3 is turned off. Consequently, thestrong attractive force acts between the permanent magnet 3A and thedeposition mask 1, thereby surely bringing the substrate for vapordeposition 2 and the deposition mask 1 close to each other. At thistime, heat is hardly generated from the coil 32 because the time forallowing the current to flow through the coil 32 of the electromagnet 3Bis spent almost for the alignment and is about 10 seconds at themaximum. When vapor deposition is continuously performed by replacementwith the substrate for vapor deposition 2, leading to accumulation ofheat, the cooling by using the heat pipe 7 (see FIG. 3) is preferablyperformed as mentioned above. As a result, the temperature increase ofthe deposition mask 1 is reduced.

Thereafter, as shown in FIG. 1, the vapor deposition material 51 isdeposited on the substrate for vapor deposition 2 by vaporizing orsublimating the vapor deposition material 51 from the vapor depositionsource 5 which is spaced apart from the deposition mask 1. Specifically,as mentioned above, line source formed by arranging crucibles linearly,are used, but the present invention is not limited thereto. For example,in the case of manufacturing an organic EL display apparatus, aplurality of types of deposition masks 1, each having openings 11 aformed for some pixels, is prepared. Then, a vapor deposition process isrepeatedly performed a multiple number of times by replacing onedeposition mask 1 with another to thereby form organic layers. In thiscase, it is efficient to prepare a plurality of vapor depositionchambers 8 (see FIG. 3), to install different deposition masks 1 in therespective vapor deposition chambers 8, and to continuously performingvapor deposition while sequentially transferring the substrates forvapor deposition 2 to the different vapor deposition chambers 8.

According to this vapor deposition method, the magnet chuck 3 includesthe permanent magnet 3A and the electromagnet 3B, and the magnetic fieldof the permanent magnet 3A is weakened when detaching the substrate forvapor deposition 2, or when aligning the substrate for vapor deposition2 and the deposition mask 1. This makes these works easier. On the otherhand, after the alignment, since the electromagnet 3B is turned off, thedeposition mask 1 is attracted by the magnetic force of the permanentmagnet 3A. Thus, the deposition mask 1 is strongly attracted to andbrought into close contact with the substrate for vapor deposition 2.Thus, the same pattern as the deposition mask 1 can be deposited. Inaddition, during the vapor deposition, the electromagnet 3B is turnedoff, and the attraction performed by using the permanent magnet 3A doesnot generate heat at all, resulting in no increase of temperature at themagnet chuck 3 during the vapor deposition. That is, this configurationcan solve the drawbacks caused when singly using the permanent magnet 3Aor when singly using the electromagnet 3B as the magnet chuck 3, so thatthe vapor deposition is performed in the accurate pattern.

(Method of Manufacturing Organic EL Display Apparatus)

Next, a method of manufacturing an organic EL display apparatus usingthe vapor deposition method of the above embodiment will be described.Any processes in the manufacturing method other than the vapordeposition method can be performed by the well-known methods. Thus, amethod of organic deposition layers by the vapor deposition method ofthe present embodiment will be mainly described with reference to FIGS.9 and 10.

The method of manufacturing an organic EL display apparatus according toa third embodiment of the present invention includes: forming a TFT (notshown), a planarizing layer, and a first electrode (for example, ananode) 22 on the support substrate 21; aligning and overlaying thedeposition mask 1 on one surface thereof; and forming an organicdeposition layer 25 of organic layers by using the above-mentioned vapordeposition method to deposit the vapor deposition material 51. A secondelectrode 26 (see FIG. 10; a cathode) is formed on the organicdeposition layer 25.

For example, although not shown completely, a driving element, such as aTFT, is formed on the support substrate 21, such as a glass plate, foreach of RGB sub-pixels in each pixel, and the first electrode 22connected to the driving element is formed, on the planarizing layer, bya combination of a metal layer made of Ag, APC, etc., and an ITO layer.As shown in FIGS. 9 and 10, insulating banks 23 made of SiO₂, an acrylicresin, a polyimide resin, or the like are formed between the sub-pixelsto isolate the sub-pixels from each other. The above-mentioneddeposition mask 1 is aligned with and fixed on such insulating banks 23on the support substrate 21. As shown in FIG. 1 described above, thefixing is performed, for example, by using the permanent magnets 3A ofthe magnet chucks 3, which are provided via the touch plate 4 over thesurface opposite to the vapor deposition surface of the supportsubstrate 21 (substrate for vapor deposition 2), to attract thedeposition mask 1. As mentioned above, since the magnetic material isused for the metal support layer 12 of the deposition mask 1 (see FIG.8), when the magnetic field is generated by the magnet chuck 3, anattraction force is also generated between the metal support layer 12 ofthe deposition mask 1 and the magnet chuck 3. At this time, as mentionedabove, the time during which the current flows through the coil 32 ofthe electromagnet 3B is short, and hence heat is hardly generated.However, by providing the heat pipe 7, even slight heat, it can bedissipated efficiently. As a result, even if there is a difference inthe coefficient of thermal expansion between the deposition mask 1 andthe support substrate 21, the relative misalignment therebetween issignificantly suppressed. In addition, the high-definition organic ELdisplay apparatus can be obtained.

In this state, as shown in FIG. 9, the vapor deposition material 51 isvaporized or sublimated from the vapor deposition source (crucible) 5 inthe vapor deposition apparatus, and then the vapor deposition material51 is deposited only on parts of the support substrate 21 exposed fromthe openings 11 a of the deposition mask 1, so that the organicdeposition layer 25 of the organic layers is formed on the firstelectrode 22 in each of desired sub-pixels. This vapor deposition stepmay be performed on each sub-pixel by sequentially replacing onedeposition mask 1 with another. A deposition mask 1 which is formed sothat the same material is simultaneously deposited on a plurality ofsub-pixels may be used. When replacing the deposition mask 1, theoperation of the electromagnet 3B (see FIG. 1), not shown in FIG. 9, iscontrolled by a power supply circuit (not shown) to weaken the magneticfield applied on the metal support layer 12 (see FIG. 8) of thedeposition mask 1.

FIGS. 9 and 10 simply show so that the organic deposition layer 25 ofthe organic layers is formed of a single layer, but the organicdeposition layer 25 of the organic layers may be formed of the organicdeposition layer 25 of a plurality of layers made of differentmaterials. For example, as a layer in contact with the anode 22, a holeinjection layer made of a material to match it well in ionization energyto improve hole injection properties may be provided. A hole transportlayer is formed on the hole injection layer using , for example, anamine-based material. The hole transport layer improves stabletransportability of holes and enables electrons confinement (energybarrier) into a light emitting layer. Further, the light emitting layer,which is selected depending on a target emission wavelength, is formedon the hole transport layer, for example, by doping red or green organicphosphor material into Alq₃, for the red or green wavelength. As ablue-based material, a bis(styryl)amine (DSA)-based organic material isused. An electron transport layer is formed of Alq₃ or the like on thelight emitting layer. The electron transport layer improves an electroninjection property and stably transports electrons. These respectivelayers, each having a thickness of about several tens of nm, aredeposited to form the organic deposition layer 25 of the organic layers.It should be noted that an electron injection layer, such as LiF or Liq,which improves the electron injection property, may also be providedbetween the organic layers and the metal electrode. In the presentembodiment, these layers are included in the organic deposition layer 25of the organic layers.

In the organic deposition layer 25 of the organic layers, an organiclayer of a material corresponding to each color of RGB is deposited asthe light emitting layer. In addition, the hole transport layer, theelectron transport layer, and the like are preferably depositedseparately by using materials suitable for the light emitting layer, iflight emission performance is emphasized. However, in consideration ofthe material cost, the same material common to two or three colors ofRGB is deposited in some cases. In a case where the material common tosub-pixels of two or more colors is deposited, the deposition mask 1 isformed to have openings 11 a formed in the sub-pixels sharing the commonmaterial. In a case where individual sub-pixels have different depositedlayers, for example, one deposition mask 1 is used for sub-pixels of R,so that the respective organic layers can be sequentially deposited. Ina case where an organic layer common to RGB is deposited, other organiclayers for the respective sub-pixels are deposited up to the lower sideof the common layer, and then at the stage of the common organic layer,the common organic layer is deposited across the entire pixels at onetime using the deposition mask 1 with the openings 11 a formed in RGBsites. In the case of mass production, a number of vacuum chambers 8 ofthe vapor deposition apparatuses may be arranged side by side, differentdeposition masks 1 may be mounted in the respective vacuum chambers 8,and the support substrate 21 (substrate for vapor deposition 2) may bemoved to each vapor deposition apparatus to continuously perform vapordeposition.

After finishing the formation of the organic deposition layer 25 of allthe organic layers including the electron injection layer, such as a LiFlayer, the electromagnets 3B are turned on to weaken the magnetic fieldas described above. In this situation, the deposition mask 1 and thesupport substrate 21 are separated from each other. Thereafter, a secondelectrode (e.g., a cathode) 26 is formed over the entire surface. Anexample shown in FIG. 10 is a system of a top emission type device, inwhich light is emitted from a surface opposite to the support substrate21 shown in the figure. Thus, the second electrode 26 is formed of alight-transmissive material, for example, a thin Mg-Ag eutectic layer.In addition, Al or the like can be used. It should be noted that in abottom emission type which emits light through the support substrate 21,ITO, In₃O₄, or the like can be used for the first electrode 22, andmetals having low work functions, for example, Mg, K, Li, Al, or thelike, can be used for the second electrode 26. A protective layer 27made of, for example, Si₃N₄ or the like, is formed on the surface of thesecond electrode 26. It should be noted that the whole laminated body issealed by a sealing layer made of glass, a moisture-resistant resinfilm, or the like (not shown), and is thus configured to prevent theorganic deposition layer 25 of the organic layers from absorbingmoisture. Alternatively, a structure can also be provided in which theorganic layers may be made common or shared as much as possible, and acolor filter may be provided on the surface of the organic layers.

(Summary)

(1) A vapor deposition apparatus according to a first embodiment of thepresent invention comprises a mask holder for holding a deposition maskincluding a magnetic material; a substrate holder for holding asubstrate for vapor deposition so as to dispose the substrate for vapordeposition in proximity to the deposition mask held by the mask holder;a vapor deposition source provided on a position facing a surface of thedeposition mask opposite to the substrate for vapor deposition andspaced apart from the deposition mask, the vapor deposition source beingadapted to vaporize or sublimate a vapor deposition material; and amagnet chuck provided on a position facing a surface of the substratefor vapor deposition held by a substrate holder, the surface beingopposite to the deposition mask, the magnet chuck being adapted toattract the deposition mask by a magnetic force, wherein the magnetchuck comprises a permanent magnet and an electromagnet.

According to the vapor deposition apparatus of the embodiment in thepresent invention, the magnet chuck includes the permanent magnet andthe electromagnet, so that the magnetic field of the permanent magnetcan be weakened by the electromagnet when the substrate for vapordeposition or the like is attached or detached, or when the substratefor vapor deposition and the deposition mask are aligned with eachother. Consequently, these works become very easy to perform, and anaccurate deposition pattern can be obtained based on the precisealignment. In addition, heat generation from the electromagnet can alsobe reduced significantly.

(2) It is preferable that the permanent magnet and the electromagnet arearranged side by side in a direction perpendicular to an axial directionof the permanent magnet, and are connected together by a magnetic plateat surfaces of the permanent magnet and the electromagnet, opposite tosurfaces thereof facing the deposition mask. With this structure, whenthe electromagnet is turned off, the polarity of the surface of thepermanent magnet, opposite to the surface thereof facing the depositionmask, leads to the same surface as the surface of the permanent magnetfacing the deposition mask via the core of the electromagnet, resultingin the same structure as the horseshoe-shaped permanent magnet, whichcan produce a strong magnetic field in the deposition mask.

(3) It is preferable that the magnetic plate is formed of a softmagnetic material because the residual magnetization due to theelectromagnet is less likely to remain.

(4) The electromagnet may be provided to generate a magnetic field thatis coaxial with respect to the axial direction of the permanent magnet.In this way, both types of magnets can be disposed without almostreducing the space for the arrangement of the conventional permanentmagnets. In this case, without overlapping the permanent magnet and theelectromagnet in the axial direction, an electromagnet can be formed bywinding a coil around the permanent magnet, or by covering the outerperiphery of the permanent magnet with a cylinder around which the coilis wound.

(5) The electromagnet has a control means for generating a magneticfield in a reverse orientation relative to an orientation of themagnetic field of the permanent magnet, so that the magnetic field ofthe permanent magnet can be weakened.

(6) It is preferable that a heat insulating member is interposed betweena support plate and each of the mask holder and the substrate holder,the support plate supporting the mask holder and the substrate holder.In this way, the heat accumulation in the deposition mask is less likelyto occur during alignment between the substrate for vapor deposition andthe deposition mask even when the temperature of the substrate for vapordeposition increases, and when vapor deposition is continuouslyperformed by replacing the substrate for vapor deposition.

(7) It is preferable that the vapor deposition apparatus furthercomprise a vacuum chamber containing the mask holder, the substrateholder, the vapor deposition source, and the magnet chuck; and a heatpipe, wherein a heat absorption part of the heat pipe is in contact withthe magnet chuck, and a heat dissipation part of the heat pipe is guidedout to an outside of the vacuum chamber. With this structure, even ifthe heat is generated in the magnet chuck, the heat conduction to thedeposition mask or the like is suppressed.

(8) The heat absorption part of the heat pipe is partly embedded in apart of the magnet chuck, thereby increasing a contact area between theheat pipe and the magnet chuck, thus making it possible to effectivelydissipate heat from the magnet chuck.

(9) By that the heat absorption part of the heat pipe is provided at asurface of the magnet chuck facing the substrate for vapor deposition,thus making it possible to further suppress the thermal conduction tothe deposition mask.

(10) A vapor deposition method according to a second embodiment of thepresent invention comprises: a step of overlaying a deposition maskincluding a magnetic material, a substrate for vapor deposition, and amagnet chuck for attracting the deposition mask, and disposing thesubstrate for vapor deposition and the deposition mask in proximity toeach other by the attraction of the deposition mask by using the magnetchuck; and a step of depositing a vapor deposition material on thesubstrate for vapor deposition by vaporizing or sublimating the vapordeposition material from a vapor deposition source spaced apart from thedeposition mask, wherein the magnet chuck comprises a permanent magnetand an electromagnet, when the substrate for vapor deposition and thedeposition mask are aligned with each other, the alignment is performedwhile applying a magnetic field in a reverse orientation relative to anorientation of the magnetic field of the permanent magnet by theelectromagnet so as to weaken the magnetic field of the permanentmagnet, and after the alignment, the deposition mask is attracted by thepermanent magnet by turning off the magnetic field of the electromagnet.

According to a vapor deposition method of the second embodiment in thepresent invention, the attachment of the substrate for vapor deposition,or the alignment between the substrate for vapor deposition and thedeposition mask can be performed without being almost influenced by themagnetic field. Consequently, these works become very easy to perform,and the alignment can also be surely performed. Further, during thevapor deposition, the deposition mask is attracted by the strongmagnetic field generated by only the permanent magnet, so that with noheat generation, the contactability between the deposition mask and thesubstrate for vapor deposition is better. Thus, the vapor depositionmaterial is deposited on the substrate for vapor deposition in theaccurate pattern of the deposition mask.

(11) It is preferable that when the substrate for vapor deposition isattached or detached, the electromagnet is turned on to weaken themagnetic field of the permanent magnet because the work when theattachment or detachment can be made easier.

(12) It is preferred that the electromagnet is turned off by graduallydecreasing a current therethrough, thereby making it possible tosuppress the occurrence of an electromotive force due to electromagneticinduction.

(13) Further, a method of manufacturing an organic EL display apparatusaccording to a third embodiment of the present invention comprises:forming at least a TFT and a first electrode on a support substrate;forming an organic deposition layer by depositing organic materials overa surface of the support substrate using the vapor deposition methodaccording to any one of paragraphs (10) to (12); and forming a secondelectrode on the organic deposition layer.

According to the method of manufacturing an organic EL display apparatusof the third embodiment in the present invention, the manufacturing workis easy to perform in the same manner as when the electromagnet is usedas the magnet chuck, and the generation of heat from the magnet chuckcan be reduced, so that the deposited layer can be obtained in theaccurate pattern without being influenced by thermal expansion, whilemaking the work easy to perform.

REFERENCE SIGNS LIST

-   1 Deposition mask-   2 Substrate for vapor deposition-   3 Magnet chuck-   3A Permanent magnet-   3B Electromagnet-   4 Touch plate-   5 Vapor deposition source-   7 Heat pipe-   8 Vacuum chamber-   12 Metal support layer-   15 Mask holder-   21 Support substrate-   22 First electrode-   23 Insulating bank-   25 Organic deposition layer-   26 Second electrode-   29 Substrate holder-   35 Magnetic plate-   66 Spacer (heat insulating member)-   71 Heat absorption part-   72 Heat dissipation part-   73 Space-   78 Protective pipe-   80 Wick structure body-   81 Case (container)-   82 Wick-   83 Wick core-   84 Groove-   96 Bellows

The invention claimed is:
 1. A vapor deposition apparatus comprising: a mask holder for holding a deposition mask including a magnetic material; a substrate holder for holding a substrate for vapor deposition so as to dispose the substrate for vapor deposition in proximity to the deposition mask held by the mask holder; a vapor deposition source provided on a position facing a surface of the deposition mask opposite to the substrate for vapor deposition and spaced apart from the deposition mask, the vapor deposition source being adapted to vaporize or sublimate a vapor deposition material; and a magnet chuck provided on a position facing a surface of the substrate for vapor deposition held by the substrate holder, the surface being opposite to the deposition mask, the magnet chuck being adapted to attract the deposition mask by a magnetic force, wherein the magnet chuck comprises a permanent magnet and an electromagnet, and the permanent magnet and the electromagnet are arranged such that the permanent magnet is opposed to the substrate for vapor deposition, the substrate for vapor deposition being held by the substrate holder, and the permanent magnet and the electromagnet are arranged in the axial direction, the surrounding thereof being fixed by a covering material; and wherein a heat pipe is provided such that a heat absorption part of the heat pipe contacts a surface opposite to the permanent magnet.
 2. A vapor deposition apparatus comprising: a mask holder for holding a deposition mask including a magnetic material; a substrate holder for holding a substrate for vapor deposition so as to dispose the substrate for vapor deposition in proximity to the deposition mask held by the mask holder; a vapor deposition source provided on a position facing a surface of the deposition mask opposite to the substrate for vapor deposition and spaced apart from the deposition mask, the vapor deposition source being adapted to vaporize or sublimate a vapor deposition material; and a magnet chuck provided on a position facing a surface of the substrate for vapor deposition held by the substrate holder, the surface being opposite to the deposition mask, the magnet chuck being adapted to attract the deposition mask by a magnetic force, wherein the magnet chuck comprises a permanent magnet and an electromagnet, and the electromagnet is formed by winding a coil around the permanent magnet.
 3. A vapor deposition apparatus comprising: a mask holder for holding a deposition mask including a magnetic material; a substrate holder for holding a substrate for vapor deposition so as to dispose the substrate for vapor deposition in proximity to the deposition mask held by the mask holder; a vapor deposition source provided on a position facing a surface of the deposition mask opposite to the substrate for vapor deposition and spaced apart from the deposition mask, the vapor deposition source being adapted to vaporize or sublimate a vapor deposition material; and a magnet chuck provided on a position facing a surface of the substrate for vapor deposition held by the substrate holder, the surface being opposite to the deposition mask, the magnet chuck being adapted to attract the deposition mask by a magnetic force, wherein the magnet chuck comprises a permanent magnet and an electromagnet, and the electromagnet is formed by covering the outer periphery of the permanent magnet with a cylinder around which the coil is wound.
 4. The vapor deposition apparatus of claim 1, wherein the electromagnet has a control means for generating a magnetic field in a reverse orientation relative to an orientation of the magnetic field of the permanent magnet.
 5. The vapor deposition apparatus of claim 2, wherein the electromagnet has a control means for generating a magnetic field in a reverse orientation relative to an orientation of the magnetic field of the permanent magnet.
 6. The vapor deposition apparatus of claim 3, wherein the electromagnet has a control means for generating a magnetic field in a reverse orientation relative to an orientation of the magnetic field of the permanent magnet.
 7. The vapor deposition apparatus of claim 1, wherein a heat insulating member is interposed between a support plate and each of the mask holder and the substrate holder, the support plate supporting the mask holder and the substrate holder.
 8. The vapor deposition apparatus of claim 2, wherein a heat insulating member is interposed between a support plate and each of the mask holder and the substrate holder, the support plate supporting the mask holder and the substrate holder.
 9. The vapor deposition apparatus of claim 3, wherein a heat insulating member is interposed between a support plate and each of the mask holder and the substrate holder, the support plate supporting the mask holder and the substrate holder.
 10. The vapor deposition apparatus of claim 2, further comprising: a vacuum chamber containing the mask holder, the substrate holder, the vapor deposition source, and the magnet chuck; and a heat pipe, wherein a heat absorption part of the heat pipe is in contact with the magnet chuck, and a heat dissipation part of the heat pipe is guided out to an outside of the vacuum chamber.
 11. The vapor deposition apparatus of claim 3, further comprising: a vacuum chamber containing the mask holder, the substrate holder, the vapor deposition source, and the magnet chuck; and a heat pipe, wherein a heat absorption part of the heat pipe is in contact with the magnet chuck, and a heat dissipation part of the heat pipe is guided out to an outside of the vacuum chamber.
 12. A vapor deposition method comprising: a step of overlaying a deposition mask including a magnetic material, a substrate for vapor deposition, and a magnet chuck for attracting the deposition mask, and disposing the substrate for vapor deposition and the deposition mask in proximity to each other by the attraction of the deposition mask by using the magnet chuck by using the vapor deposition apparatus of claim 1; and a step of depositing a vapor deposition material on the substrate for vapor deposition by vaporizing or sublimating the vapor deposition material from a vapor deposition source spaced apart from the deposition mask, wherein the magnet chuck comprises a permanent magnet and an electromagnet, when the substrate for vapor deposition and the deposition mask are aligned with each other, the alignment is performed while applying a magnetic field in a reverse orientation relative to an orientation of a magnetic field of the permanent magnet by using the electromagnet so as to weaken the magnetic field of the permanent magnet, and after the alignment, the deposition mask is attracted by the permanent magnet by turning off the magnetic field of the electromagnet.
 13. A vapor deposition method comprising: a step of overlaying a deposition mask including a magnetic material, a substrate for vapor deposition, and a magnet chuck for attracting the deposition mask, and disposing the substrate for vapor deposition and the deposition mask in proximity to each other by the attraction of the deposition mask by using the magnet chuck by using the vapor deposition apparatus of claim 2; and a step of depositing a vapor deposition material on the substrate for vapor deposition by vaporizing or sublimating the vapor deposition material from a vapor deposition source spaced apart from the deposition mask, wherein the magnet chuck comprises a permanent magnet and an electromagnet, when the substrate for vapor deposition and the deposition mask are aligned with each other, the alignment is performed while applying a magnetic field in a reverse orientation relative to an orientation of a magnetic field of the permanent magnet by using the electromagnet so as to weaken the magnetic field of the permanent magnet, and after the alignment, the deposition mask is attracted by the permanent magnet by turning off the magnetic field of the electromagnet.
 14. A vapor deposition method comprising: a step of overlaying a deposition mask including a magnetic material, a substrate for vapor deposition, and a magnet chuck for attracting the deposition mask, and disposing the substrate for vapor deposition and the deposition mask in proximity to each other by the attraction of the deposition mask by using the magnet chuck by using the vapor deposition apparatus of claim 3; and a step of depositing a vapor deposition material on the substrate for vapor deposition by vaporizing or sublimating the vapor deposition material from a vapor deposition source spaced apart from the deposition mask, wherein the magnet chuck comprises a permanent magnet and an electromagnet, when the substrate for vapor deposition and the deposition mask are aligned with each other, the alignment is performed while applying a magnetic field in a reverse orientation relative to an orientation of a magnetic field of the permanent magnet by using the electromagnet so as to weaken the magnetic field of the permanent magnet, and after the alignment, the deposition mask is attracted by the permanent magnet by turning off the magnetic field of the electromagnet.
 15. A method of manufacturing an organic EL display apparatus, comprising: forming at least a TFT and a first electrode on a support substrate; forming an organic deposition layer by depositing organic materials over a surface of the support substrate using the vapor deposition method according to claim 12; and forming a second electrode on the organic deposition layer.
 16. A method of manufacturing an organic EL display apparatus, comprising: forming at least a TFT and a first electrode on a support substrate; forming an organic deposition layer by depositing organic materials over a surface of the support substrate using the vapor deposition method according to claim 13; and forming a second electrode on the organic deposition layer.
 17. A method of manufacturing an organic EL display apparatus, comprising: forming at least a TFT and a first electrode on a support substrate; forming an organic deposition layer by depositing organic materials over a surface of the support substrate using the vapor deposition method according to claim 14; and forming a second electrode on the organic deposition layer. 